Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots

Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controll...

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Detalles Bibliográficos
Autores principales: Chen, Ze-Sheng, Ma, Ben, Shang, Xiang-Jun, He, Yu, Zhang, Li-Chun, Ni, Hai-Qiao, Wang, Jin-Liang, Niu, Zhi-Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5005251/
https://www.ncbi.nlm.nih.gov/pubmed/27576522
http://dx.doi.org/10.1186/s11671-016-1597-0
Descripción
Sumario:Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g(2)(0) < 0.5 which demonstrates a pure single-photon emission.

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