Dual-mode operation of 2D material-base hot electron transistors

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS(2), in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron...

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Detalles Bibliográficos
Autores principales: Lan, Yann-Wen, Torres, Jr., Carlos M., Zhu, Xiaodan, Qasem, Hussam, Adleman, James R., Lerner, Mitchell B., Tsai, Shin-Hung, Shi, Yumeng, Li, Lain-Jong, Yeh, Wen-Kuan, Wang, Kang L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5007484/
https://www.ncbi.nlm.nih.gov/pubmed/27581550
http://dx.doi.org/10.1038/srep32503

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5007484/
https://www.ncbi.nlm.nih.gov/pubmed/27581550
http://dx.doi.org/10.1038/srep32503

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