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Dual-mode operation of 2D material-base hot electron transistors
Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS(2), in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5007484/ https://www.ncbi.nlm.nih.gov/pubmed/27581550 http://dx.doi.org/10.1038/srep32503 |