Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)(2)Te(3) films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is t...

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Autores principales: Li, W., Claassen, M., Chang, Cui-Zu, Moritz, B., Jia, T., Zhang, C., Rebec, S., Lee, J. J., Hashimoto, M., Lu, D.-H., Moore, R. G., Moodera, J. S., Devereaux, T. P., Shen, Z.-X.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5013448/
https://www.ncbi.nlm.nih.gov/pubmed/27599406
http://dx.doi.org/10.1038/srep32732
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author Li, W.
Claassen, M.
Chang, Cui-Zu
Moritz, B.
Jia, T.
Zhang, C.
Rebec, S.
Lee, J. J.
Hashimoto, M.
Lu, D.-H.
Moore, R. G.
Moodera, J. S.
Devereaux, T. P.
Shen, Z.-X.
author_facet Li, W.
Claassen, M.
Chang, Cui-Zu
Moritz, B.
Jia, T.
Zhang, C.
Rebec, S.
Lee, J. J.
Hashimoto, M.
Lu, D.-H.
Moore, R. G.
Moodera, J. S.
Devereaux, T. P.
Shen, Z.-X.
author_sort Li, W.
collection PubMed
description The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)(2)Te(3) films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)(2)Te(3) thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.
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spelling pubmed-50134482016-09-12 Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film Li, W. Claassen, M. Chang, Cui-Zu Moritz, B. Jia, T. Zhang, C. Rebec, S. Lee, J. J. Hashimoto, M. Lu, D.-H. Moore, R. G. Moodera, J. S. Devereaux, T. P. Shen, Z.-X. Sci Rep Article The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)(2)Te(3) films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)(2)Te(3) thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy. Nature Publishing Group 2016-09-07 /pmc/articles/PMC5013448/ /pubmed/27599406 http://dx.doi.org/10.1038/srep32732 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Li, W.
Claassen, M.
Chang, Cui-Zu
Moritz, B.
Jia, T.
Zhang, C.
Rebec, S.
Lee, J. J.
Hashimoto, M.
Lu, D.-H.
Moore, R. G.
Moodera, J. S.
Devereaux, T. P.
Shen, Z.-X.
Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film
title Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film
title_full Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film
title_fullStr Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film
title_full_unstemmed Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film
title_short Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)(2)Te(3) film
title_sort origin of the low critical observing temperature of the quantum anomalous hall effect in v-doped (bi, sb)(2)te(3) film
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5013448/
https://www.ncbi.nlm.nih.gov/pubmed/27599406
http://dx.doi.org/10.1038/srep32732
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