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Nucleation and strain-stabilization during organic semiconductor thin film deposition
The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5013491/ https://www.ncbi.nlm.nih.gov/pubmed/27600905 http://dx.doi.org/10.1038/srep32620 |
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author | Li, Yang Wan, Jing Smilgies, Detlef-M. Bouffard, Nicole Sun, Richard Headrick, Randall L. |
author_facet | Li, Yang Wan, Jing Smilgies, Detlef-M. Bouffard, Nicole Sun, Richard Headrick, Randall L. |
author_sort | Li, Yang |
collection | PubMed |
description | The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135 °C. |
format | Online Article Text |
id | pubmed-5013491 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-50134912016-09-12 Nucleation and strain-stabilization during organic semiconductor thin film deposition Li, Yang Wan, Jing Smilgies, Detlef-M. Bouffard, Nicole Sun, Richard Headrick, Randall L. Sci Rep Article The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135 °C. Nature Publishing Group 2016-09-07 /pmc/articles/PMC5013491/ /pubmed/27600905 http://dx.doi.org/10.1038/srep32620 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Li, Yang Wan, Jing Smilgies, Detlef-M. Bouffard, Nicole Sun, Richard Headrick, Randall L. Nucleation and strain-stabilization during organic semiconductor thin film deposition |
title | Nucleation and strain-stabilization during organic semiconductor thin film deposition |
title_full | Nucleation and strain-stabilization during organic semiconductor thin film deposition |
title_fullStr | Nucleation and strain-stabilization during organic semiconductor thin film deposition |
title_full_unstemmed | Nucleation and strain-stabilization during organic semiconductor thin film deposition |
title_short | Nucleation and strain-stabilization during organic semiconductor thin film deposition |
title_sort | nucleation and strain-stabilization during organic semiconductor thin film deposition |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5013491/ https://www.ncbi.nlm.nih.gov/pubmed/27600905 http://dx.doi.org/10.1038/srep32620 |
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