Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO(3)/WO(x)/W Structure

Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO(3)/WO(x)/W structure have been investigated for the first time. Transmission electron microscope image shows a polycrystalline WO(3)/WO(x) layer in a device with a size of 150 × 150 nm(2). The composition of WO(3)/WO(x) is confirmed by X-ray photo-electron spectroscopy. Non-linear bipolar resistive switching characteristics have been simulated using space-charge limited current (SCLC) conduction at low voltage, F-N tunneling at higher voltage regions, and hopping conduction during reset, which is well fitted with experimental current-voltage characteristics. The barrier height at the WO(x)/W interface for the devices annealed at 500 °C is lower than those of the as-deposited and annealed at 400 °C (0.63 vs. 1.03 eV). An oxygen-vacant conducting filament with a diameter of ~34 nm is formed/ruptured into the WO(3)/WO(x) bilayer owing to oxygen ion migration under external bias as well as barrier height changes for high-resistance to low-resistance states. In addition, the switching mechanism including the easy method has been explored through the current-voltage simulation. The devices annealed at 500 °C have a lower operation voltage, lower barrier height, and higher non-linearity factor, which are beneficial for selector-less crossbar memory arrays.