Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO(3)/WO(x)/W Structure

Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO(3)/WO(x)/W structure have been investigated for the first time. Transmission electron microscope image shows a...

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Detalles Bibliográficos
Autores principales: Chakrabarti, Somsubhra, Samanta, Subhranu, Maikap, Siddheswar, Rahaman, Sheikh Ziaur, Cheng, Hsin-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5014781/
https://www.ncbi.nlm.nih.gov/pubmed/27605241
http://dx.doi.org/10.1186/s11671-016-1602-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5014781/
https://www.ncbi.nlm.nih.gov/pubmed/27605241
http://dx.doi.org/10.1186/s11671-016-1602-7

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