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Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO(3)/WO(x)/W Structure
Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO(3)/WO(x)/W structure have been investigated for the first time. Transmission electron microscope image shows a...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5014781/ https://www.ncbi.nlm.nih.gov/pubmed/27605241 http://dx.doi.org/10.1186/s11671-016-1602-7 |