Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys

Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed b...

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Detalles Bibliográficos
Autores principales: De Leonardis, Francesco, Troia, Benedetto, Soref, Richard A., Passaro, Vittorio M. N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5020741/
https://www.ncbi.nlm.nih.gov/pubmed/27622979
http://dx.doi.org/10.1038/srep32622

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5020741/
https://www.ncbi.nlm.nih.gov/pubmed/27622979
http://dx.doi.org/10.1038/srep32622

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