Optical thermometry based on level anticrossing in silicon carbide

We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Al...

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Detalles Bibliográficos
Autores principales: Anisimov, A. N., Simin, D., Soltamov, V. A., Lebedev, S. P., Baranov, P. G., Astakhov, G. V., Dyakonov, V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5022017/
https://www.ncbi.nlm.nih.gov/pubmed/27624819
http://dx.doi.org/10.1038/srep33301

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5022017/
https://www.ncbi.nlm.nih.gov/pubmed/27624819
http://dx.doi.org/10.1038/srep33301

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