Cargando…

Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application

The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were inve...

Descripción completa

Detalles Bibliográficos
Autores principales: Huang, Xian-Xiong, Zhang, Tian-Fu, Tang, Xin-Gui, Jiang, Yan-Ping, Liu, Qiu-Xiang, Feng, Zu-Yong, Zhou, Qi-Fa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5024117/
https://www.ncbi.nlm.nih.gov/pubmed/27628266
http://dx.doi.org/10.1038/srep31960
_version_ 1782453748516257792
author Huang, Xian-Xiong
Zhang, Tian-Fu
Tang, Xin-Gui
Jiang, Yan-Ping
Liu, Qiu-Xiang
Feng, Zu-Yong
Zhou, Qi-Fa
author_facet Huang, Xian-Xiong
Zhang, Tian-Fu
Tang, Xin-Gui
Jiang, Yan-Ping
Liu, Qiu-Xiang
Feng, Zu-Yong
Zhou, Qi-Fa
author_sort Huang, Xian-Xiong
collection PubMed
description The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr(0.7)Pb(0.3)TiO(3) (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work.
format Online
Article
Text
id pubmed-5024117
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-50241172016-09-20 Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application Huang, Xian-Xiong Zhang, Tian-Fu Tang, Xin-Gui Jiang, Yan-Ping Liu, Qiu-Xiang Feng, Zu-Yong Zhou, Qi-Fa Sci Rep Article The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr(0.7)Pb(0.3)TiO(3) (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work. Nature Publishing Group 2016-09-15 /pmc/articles/PMC5024117/ /pubmed/27628266 http://dx.doi.org/10.1038/srep31960 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Huang, Xian-Xiong
Zhang, Tian-Fu
Tang, Xin-Gui
Jiang, Yan-Ping
Liu, Qiu-Xiang
Feng, Zu-Yong
Zhou, Qi-Fa
Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application
title Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application
title_full Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application
title_fullStr Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application
title_full_unstemmed Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application
title_short Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application
title_sort dielectric relaxation and pinning phenomenon of (sr,pb)tio(3) ceramics for dielectric tunable device application
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5024117/
https://www.ncbi.nlm.nih.gov/pubmed/27628266
http://dx.doi.org/10.1038/srep31960
work_keys_str_mv AT huangxianxiong dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication
AT zhangtianfu dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication
AT tangxingui dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication
AT jiangyanping dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication
AT liuqiuxiang dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication
AT fengzuyong dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication
AT zhouqifa dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication