Cargando…
Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application
The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were inve...
Autores principales: | , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5024117/ https://www.ncbi.nlm.nih.gov/pubmed/27628266 http://dx.doi.org/10.1038/srep31960 |
_version_ | 1782453748516257792 |
---|---|
author | Huang, Xian-Xiong Zhang, Tian-Fu Tang, Xin-Gui Jiang, Yan-Ping Liu, Qiu-Xiang Feng, Zu-Yong Zhou, Qi-Fa |
author_facet | Huang, Xian-Xiong Zhang, Tian-Fu Tang, Xin-Gui Jiang, Yan-Ping Liu, Qiu-Xiang Feng, Zu-Yong Zhou, Qi-Fa |
author_sort | Huang, Xian-Xiong |
collection | PubMed |
description | The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr(0.7)Pb(0.3)TiO(3) (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work. |
format | Online Article Text |
id | pubmed-5024117 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-50241172016-09-20 Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application Huang, Xian-Xiong Zhang, Tian-Fu Tang, Xin-Gui Jiang, Yan-Ping Liu, Qiu-Xiang Feng, Zu-Yong Zhou, Qi-Fa Sci Rep Article The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr(0.7)Pb(0.3)TiO(3) (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work. Nature Publishing Group 2016-09-15 /pmc/articles/PMC5024117/ /pubmed/27628266 http://dx.doi.org/10.1038/srep31960 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Huang, Xian-Xiong Zhang, Tian-Fu Tang, Xin-Gui Jiang, Yan-Ping Liu, Qiu-Xiang Feng, Zu-Yong Zhou, Qi-Fa Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application |
title | Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application |
title_full | Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application |
title_fullStr | Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application |
title_full_unstemmed | Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application |
title_short | Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO(3) ceramics for dielectric tunable device application |
title_sort | dielectric relaxation and pinning phenomenon of (sr,pb)tio(3) ceramics for dielectric tunable device application |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5024117/ https://www.ncbi.nlm.nih.gov/pubmed/27628266 http://dx.doi.org/10.1038/srep31960 |
work_keys_str_mv | AT huangxianxiong dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication AT zhangtianfu dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication AT tangxingui dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication AT jiangyanping dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication AT liuqiuxiang dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication AT fengzuyong dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication AT zhouqifa dielectricrelaxationandpinningphenomenonofsrpbtio3ceramicsfordielectrictunabledeviceapplication |