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Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5032010/ https://www.ncbi.nlm.nih.gov/pubmed/27653206 http://dx.doi.org/10.1038/srep29875 |
| _version_ | 1782454906176667648 |
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| author | Renard, Charles Molière, Timothée Cherkashin, Nikolay Alvarez, José Vincent, Laetitia Jaffré, Alexandre Hallais, Géraldine Connolly, James Patrick Mencaraglia, Denis Bouchier, Daniel |
| author_facet | Renard, Charles Molière, Timothée Cherkashin, Nikolay Alvarez, José Vincent, Laetitia Jaffré, Alexandre Hallais, Géraldine Connolly, James Patrick Mencaraglia, Denis Bouchier, Daniel |
| author_sort | Renard, Charles |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-5032010 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-50320102016-09-29 Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed Renard, Charles Molière, Timothée Cherkashin, Nikolay Alvarez, José Vincent, Laetitia Jaffré, Alexandre Hallais, Géraldine Connolly, James Patrick Mencaraglia, Denis Bouchier, Daniel Sci Rep Erratum Nature Publishing Group 2016-09-22 /pmc/articles/PMC5032010/ /pubmed/27653206 http://dx.doi.org/10.1038/srep29875 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| spellingShingle | Erratum Renard, Charles Molière, Timothée Cherkashin, Nikolay Alvarez, José Vincent, Laetitia Jaffré, Alexandre Hallais, Géraldine Connolly, James Patrick Mencaraglia, Denis Bouchier, Daniel Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed |
| title | Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed |
| title_full | Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed |
| title_fullStr | Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed |
| title_full_unstemmed | Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed |
| title_short | Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed |
| title_sort | erratum: high current density gaas/si rectifying heterojunction by defect free epitaxial lateral overgrowth on tunnel oxide from nano-seed |
| topic | Erratum |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5032010/ https://www.ncbi.nlm.nih.gov/pubmed/27653206 http://dx.doi.org/10.1038/srep29875 |
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