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Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Detalles Bibliográficos
Autores principales:	Renard, Charles, Molière, Timothée, Cherkashin, Nikolay, Alvarez, José, Vincent, Laetitia, Jaffré, Alexandre, Hallais, Géraldine, Connolly, James Patrick, Mencaraglia, Denis, Bouchier, Daniel
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Erratum
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5032010/ https://www.ncbi.nlm.nih.gov/pubmed/27653206 http://dx.doi.org/10.1038/srep29875

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