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Disorder Control in Crystalline GeSb(2)Te(4) Using High Pressure
Electronic phase‐change memory devices take advantage of the different resistivity of two states, amorphous and crystalline, and the swift transitions between them in active phase‐change materials (PCMs). In addition to these two distinct phases, multiple resistive states can be obtained by tuning t...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5034799/ https://www.ncbi.nlm.nih.gov/pubmed/27708999 http://dx.doi.org/10.1002/advs.201500117 |