Cargando…
Communication: The formation of rarefaction waves in semiconductors after ultrashort excitation probed by grazing incidence ultrafast time-resolved x-ray diffraction
We explore the InSb-semiconductor lattice dynamics after excitation of high density electron-hole plasma with an ultrashort and intense laser pulse. By using time resolved x-ray diffraction, a sub-mÅ and sub-ps resolution was achieved. Thus, a strain of 4% was measured in a 3 nm thin surface layer 2...
Autores principales: | Höfer, S., Kämpfer, T., Förster, E., Stöhlker, T., Uschmann, I. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Crystallographic Association
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5035306/ https://www.ncbi.nlm.nih.gov/pubmed/27704034 http://dx.doi.org/10.1063/1.4963011 |
Ejemplares similares
-
Semiconductors probed by ultrafast laser spectroscopy
por: Alfano, R R
Publicado: (1985) -
Semiconductors probed by ultrafast laser spectroscopy
por: Alfano, R R
Publicado: (1985) -
GIDInd: an automated indexing software for grazing-incidence X-ray diffraction data
por: Kainz, Manuel Peter, et al.
Publicado: (2021) -
Resolving Nonlinear
Recombination Dynamics in Semiconductors
via Ultrafast Excitation Correlation Spectroscopy: Photoluminescence
versus Photocurrent Detection
por: Rojas-Gatjens, Esteban, et al.
Publicado: (2023) -
Indexing grazing-incidence X-ray diffraction patterns of thin films: lattices of higher symmetry
por: Simbrunner, Josef, et al.
Publicado: (2019)