Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatil...

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Detalles Bibliográficos
Autores principales: Su, Meng, Yang, Zhenyu, Liao, Lei, Zou, Xuming, Ho, Johnny C., Wang, Jingli, Wang, Jianlu, Hu, Weida, Xiao, Xiangheng, Jiang, Changzhong, Liu, Chuansheng, Guo, Tailiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5039971/
https://www.ncbi.nlm.nih.gov/pubmed/27711260
http://dx.doi.org/10.1002/advs.201600078
Descripción
Sumario:A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the side‐gate geometries. [Image: see text]

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