Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatil...

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Detalles Bibliográficos
Autores principales: Su, Meng, Yang, Zhenyu, Liao, Lei, Zou, Xuming, Ho, Johnny C., Wang, Jingli, Wang, Jianlu, Hu, Weida, Xiao, Xiangheng, Jiang, Changzhong, Liu, Chuansheng, Guo, Tailiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5039971/
https://www.ncbi.nlm.nih.gov/pubmed/27711260
http://dx.doi.org/10.1002/advs.201600078
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author Su, Meng
Yang, Zhenyu
Liao, Lei
Zou, Xuming
Ho, Johnny C.
Wang, Jingli
Wang, Jianlu
Hu, Weida
Xiao, Xiangheng
Jiang, Changzhong
Liu, Chuansheng
Guo, Tailiang
author_facet Su, Meng
Yang, Zhenyu
Liao, Lei
Zou, Xuming
Ho, Johnny C.
Wang, Jingli
Wang, Jianlu
Hu, Weida
Xiao, Xiangheng
Jiang, Changzhong
Liu, Chuansheng
Guo, Tailiang
author_sort Su, Meng
collection PubMed
description A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the side‐gate geometries. [Image: see text]
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spelling pubmed-50399712016-10-03 Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications Su, Meng Yang, Zhenyu Liao, Lei Zou, Xuming Ho, Johnny C. Wang, Jingli Wang, Jianlu Hu, Weida Xiao, Xiangheng Jiang, Changzhong Liu, Chuansheng Guo, Tailiang Adv Sci (Weinh) Communications A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the side‐gate geometries. [Image: see text] John Wiley and Sons Inc. 2016-04-15 /pmc/articles/PMC5039971/ /pubmed/27711260 http://dx.doi.org/10.1002/advs.201600078 Text en © 2016 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Communications
Su, Meng
Yang, Zhenyu
Liao, Lei
Zou, Xuming
Ho, Johnny C.
Wang, Jingli
Wang, Jianlu
Hu, Weida
Xiao, Xiangheng
Jiang, Changzhong
Liu, Chuansheng
Guo, Tailiang
Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
title Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
title_full Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
title_fullStr Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
title_full_unstemmed Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
title_short Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
title_sort side‐gated in(2)o(3) nanowire ferroelectric fets for high‐performance nonvolatile memory applications
topic Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5039971/
https://www.ncbi.nlm.nih.gov/pubmed/27711260
http://dx.doi.org/10.1002/advs.201600078
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