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Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatil...
Autores principales: | Su, Meng, Yang, Zhenyu, Liao, Lei, Zou, Xuming, Ho, Johnny C., Wang, Jingli, Wang, Jianlu, Hu, Weida, Xiao, Xiangheng, Jiang, Changzhong, Liu, Chuansheng, Guo, Tailiang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5039971/ https://www.ncbi.nlm.nih.gov/pubmed/27711260 http://dx.doi.org/10.1002/advs.201600078 |
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