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Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br(-)) in cetyl trimethylammonium bromide (CTAB). The Br(-) ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs...

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Autores principales: Kang, Byoung-Ho, Lee, Jae-Sung, Lee, Sang-Won, Kim, Sae-Wan, Lee, Jun-Woo, Gopalan, Sai-Anand, Park, Ji-Sub, Kwon, Dae-Hyuk, Bae, Jin-Hyuk, Kim, Hak-Rin, Kang, Shin-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5043346/
https://www.ncbi.nlm.nih.gov/pubmed/27686147
http://dx.doi.org/10.1038/srep34659
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author Kang, Byoung-Ho
Lee, Jae-Sung
Lee, Sang-Won
Kim, Sae-Wan
Lee, Jun-Woo
Gopalan, Sai-Anand
Park, Ji-Sub
Kwon, Dae-Hyuk
Bae, Jin-Hyuk
Kim, Hak-Rin
Kang, Shin-Won
author_facet Kang, Byoung-Ho
Lee, Jae-Sung
Lee, Sang-Won
Kim, Sae-Wan
Lee, Jun-Woo
Gopalan, Sai-Anand
Park, Ji-Sub
Kwon, Dae-Hyuk
Bae, Jin-Hyuk
Kim, Hak-Rin
Kang, Shin-Won
author_sort Kang, Byoung-Ho
collection PubMed
description We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br(-)) in cetyl trimethylammonium bromide (CTAB). The Br(-) ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m(2) and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.
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spelling pubmed-50433462016-10-05 Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices Kang, Byoung-Ho Lee, Jae-Sung Lee, Sang-Won Kim, Sae-Wan Lee, Jun-Woo Gopalan, Sai-Anand Park, Ji-Sub Kwon, Dae-Hyuk Bae, Jin-Hyuk Kim, Hak-Rin Kang, Shin-Won Sci Rep Article We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br(-)) in cetyl trimethylammonium bromide (CTAB). The Br(-) ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m(2) and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface. Nature Publishing Group 2016-09-30 /pmc/articles/PMC5043346/ /pubmed/27686147 http://dx.doi.org/10.1038/srep34659 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Kang, Byoung-Ho
Lee, Jae-Sung
Lee, Sang-Won
Kim, Sae-Wan
Lee, Jun-Woo
Gopalan, Sai-Anand
Park, Ji-Sub
Kwon, Dae-Hyuk
Bae, Jin-Hyuk
Kim, Hak-Rin
Kang, Shin-Won
Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices
title Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices
title_full Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices
title_fullStr Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices
title_full_unstemmed Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices
title_short Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices
title_sort efficient exciton generation in atomic passivated cdse/zns quantum dots light-emitting devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5043346/
https://www.ncbi.nlm.nih.gov/pubmed/27686147
http://dx.doi.org/10.1038/srep34659
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