Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer

In the present work, we demonstrate that both GaBi(3) and InBi(3) monolayers are Quantum Spin Hall insulators. Here, the electronic band structures and edge states of the two novel monolayers are systematically investigated by first principle calculation. Our analysis of the band inversion and Z(2)...

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Detalles Bibliográficos
Autores principales: Liu, Qunqun, Dai, Ying, Ma, Yandong, Li, Xinru, Li, Tiejun, Niu, Chengwang, Huang, Baibiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5054400/
https://www.ncbi.nlm.nih.gov/pubmed/27713518
http://dx.doi.org/10.1038/srep34861
_version_ 1782458591273287680
author Liu, Qunqun
Dai, Ying
Ma, Yandong
Li, Xinru
Li, Tiejun
Niu, Chengwang
Huang, Baibiao
author_facet Liu, Qunqun
Dai, Ying
Ma, Yandong
Li, Xinru
Li, Tiejun
Niu, Chengwang
Huang, Baibiao
author_sort Liu, Qunqun
collection PubMed
description In the present work, we demonstrate that both GaBi(3) and InBi(3) monolayers are Quantum Spin Hall insulators. Here, the electronic band structures and edge states of the two novel monolayers are systematically investigated by first principle calculation. Our analysis of the band inversion and Z(2) number demonstrate that both GaBi(3) and InBi(3) are promising 2D TIs with large gaps of 283meV and 247meV, respectively. Taking GaBi(3) as example, it is illustrated that the edge states are impacted by SOC and finite size effect. In addition, it is found that the compression and tension totally affect differently on the edge states. Finally, the electron velocity is studied in detail, which is highly important in the manufacturing of spintronics device.
format Online
Article
Text
id pubmed-5054400
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-50544002016-10-19 Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer Liu, Qunqun Dai, Ying Ma, Yandong Li, Xinru Li, Tiejun Niu, Chengwang Huang, Baibiao Sci Rep Article In the present work, we demonstrate that both GaBi(3) and InBi(3) monolayers are Quantum Spin Hall insulators. Here, the electronic band structures and edge states of the two novel monolayers are systematically investigated by first principle calculation. Our analysis of the band inversion and Z(2) number demonstrate that both GaBi(3) and InBi(3) are promising 2D TIs with large gaps of 283meV and 247meV, respectively. Taking GaBi(3) as example, it is illustrated that the edge states are impacted by SOC and finite size effect. In addition, it is found that the compression and tension totally affect differently on the edge states. Finally, the electron velocity is studied in detail, which is highly important in the manufacturing of spintronics device. Nature Publishing Group 2016-10-07 /pmc/articles/PMC5054400/ /pubmed/27713518 http://dx.doi.org/10.1038/srep34861 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Liu, Qunqun
Dai, Ying
Ma, Yandong
Li, Xinru
Li, Tiejun
Niu, Chengwang
Huang, Baibiao
Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
title Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
title_full Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
title_fullStr Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
title_full_unstemmed Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
title_short Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer
title_sort large gap quantum spin hall insulators of hexagonal iii-bi monolayer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5054400/
https://www.ncbi.nlm.nih.gov/pubmed/27713518
http://dx.doi.org/10.1038/srep34861
work_keys_str_mv AT liuqunqun largegapquantumspinhallinsulatorsofhexagonaliiibimonolayer
AT daiying largegapquantumspinhallinsulatorsofhexagonaliiibimonolayer
AT mayandong largegapquantumspinhallinsulatorsofhexagonaliiibimonolayer
AT lixinru largegapquantumspinhallinsulatorsofhexagonaliiibimonolayer
AT litiejun largegapquantumspinhallinsulatorsofhexagonaliiibimonolayer
AT niuchengwang largegapquantumspinhallinsulatorsofhexagonaliiibimonolayer
AT huangbaibiao largegapquantumspinhallinsulatorsofhexagonaliiibimonolayer

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