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MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventio...

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Autores principales: Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, Lu, Yicheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056374/
https://www.ncbi.nlm.nih.gov/pubmed/27721484
http://dx.doi.org/10.1038/srep34169
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author Hong, Wen-Chiang
Ku, Chieh-Jen
Li, Rui
Abbaslou, Siamak
Reyes, Pavel
Wang, Szu-Ying
Li, Guangyuan
Lu, Ming
Sheng, Kuang
Lu, Yicheng
author_facet Hong, Wen-Chiang
Ku, Chieh-Jen
Li, Rui
Abbaslou, Siamak
Reyes, Pavel
Wang, Szu-Ying
Li, Guangyuan
Lu, Ming
Sheng, Kuang
Lu, Yicheng
author_sort Hong, Wen-Chiang
collection PubMed
description Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.
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spelling pubmed-50563742016-10-19 MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics Hong, Wen-Chiang Ku, Chieh-Jen Li, Rui Abbaslou, Siamak Reyes, Pavel Wang, Szu-Ying Li, Guangyuan Lu, Ming Sheng, Kuang Lu, Yicheng Sci Rep Article Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass. Nature Publishing Group 2016-10-10 /pmc/articles/PMC5056374/ /pubmed/27721484 http://dx.doi.org/10.1038/srep34169 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Hong, Wen-Chiang
Ku, Chieh-Jen
Li, Rui
Abbaslou, Siamak
Reyes, Pavel
Wang, Szu-Ying
Li, Guangyuan
Lu, Ming
Sheng, Kuang
Lu, Yicheng
MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
title MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
title_full MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
title_fullStr MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
title_full_unstemmed MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
title_short MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
title_sort mgzno high voltage thin film transistors on glass for inverters in building integrated photovoltaics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056374/
https://www.ncbi.nlm.nih.gov/pubmed/27721484
http://dx.doi.org/10.1038/srep34169
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