Cargando…
Simulation Evidence of Hexagonal‐to‐Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide‐Range Tunable Direct Bandgap
2D material with tunable direct bandgap in the intermediate region (i.e., ≈2–3 eV) is key to the achievement of high efficiency in visible‐light optical devices. Herein, a simulation evidence of structure transition of monolayer ZnSe from the experimental pseudohexagonal structure to the tetragonal...
Autores principales: | Li, Lei, Li, Pengfei, Lu, Ning, Dai, Jun, Zeng, Xiao Cheng |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5061093/ https://www.ncbi.nlm.nih.gov/pubmed/27774379 http://dx.doi.org/10.1002/advs.201500290 |
Ejemplares similares
-
Tunable Bandgaps: Simulation Evidence of Hexagonal‐to‐Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide‐Range Tunable Direct Bandgap (Adv. Sci. 12/2015)
por: Li, Lei, et al.
Publicado: (2015) -
ZnSe/ZnSeTe Superlattice Nanotips
por: Hsiao, CH, et al.
Publicado: (2010) -
Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures
por: Xiao, Wenjun, et al.
Publicado: (2021) -
Implanted light dopants in ZnSe
por: Ittermann, B, et al.
Publicado: (1999) -
Shell Thickness Dependence of Interparticle Energy Transfer in Core-Shell ZnSe/ZnSe Quantum Dots Doping with Europium
por: Liu, Ni, et al.
Publicado: (2018)