Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters

Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E (to) of 1.03–0.73 Vμm(−1) up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatur...

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Detalles Bibliográficos
Autores principales: Chen, Shanliang, Shang, Minghui, Gao, Fengmei, Wang, Lin, Ying, Pengzhan, Yang, Weiyou, Fang, Xiaosheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2015
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5063129/
https://www.ncbi.nlm.nih.gov/pubmed/27774383
http://dx.doi.org/10.1002/advs.201500256
Descripción
Sumario:Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E (to) of 1.03–0.73 Vμm(−1) up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%–3.4%). [Image: see text]

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