Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters

Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E (to) of 1.03–0.73 Vμm(−1) up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatur...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Shanliang, Shang, Minghui, Gao, Fengmei, Wang, Lin, Ying, Pengzhan, Yang, Weiyou, Fang, Xiaosheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2015
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5063129/
https://www.ncbi.nlm.nih.gov/pubmed/27774383
http://dx.doi.org/10.1002/advs.201500256
_version_ 1782459912964538368
author Chen, Shanliang
Shang, Minghui
Gao, Fengmei
Wang, Lin
Ying, Pengzhan
Yang, Weiyou
Fang, Xiaosheng
author_facet Chen, Shanliang
Shang, Minghui
Gao, Fengmei
Wang, Lin
Ying, Pengzhan
Yang, Weiyou
Fang, Xiaosheng
author_sort Chen, Shanliang
collection PubMed
description Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E (to) of 1.03–0.73 Vμm(−1) up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%–3.4%). [Image: see text]
format Online
Article
Text
id pubmed-5063129
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-50631292016-10-19 Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters Chen, Shanliang Shang, Minghui Gao, Fengmei Wang, Lin Ying, Pengzhan Yang, Weiyou Fang, Xiaosheng Adv Sci (Weinh) Communications Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E (to) of 1.03–0.73 Vμm(−1) up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%–3.4%). [Image: see text] John Wiley and Sons Inc. 2015-11-17 /pmc/articles/PMC5063129/ /pubmed/27774383 http://dx.doi.org/10.1002/advs.201500256 Text en © 2015 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Communications
Chen, Shanliang
Shang, Minghui
Gao, Fengmei
Wang, Lin
Ying, Pengzhan
Yang, Weiyou
Fang, Xiaosheng
Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
title Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
title_full Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
title_fullStr Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
title_full_unstemmed Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
title_short Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
title_sort extremely stable current emission of p‐doped sic flexible field emitters
topic Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5063129/
https://www.ncbi.nlm.nih.gov/pubmed/27774383
http://dx.doi.org/10.1002/advs.201500256
work_keys_str_mv AT chenshanliang extremelystablecurrentemissionofpdopedsicflexiblefieldemitters
AT shangminghui extremelystablecurrentemissionofpdopedsicflexiblefieldemitters
AT gaofengmei extremelystablecurrentemissionofpdopedsicflexiblefieldemitters
AT wanglin extremelystablecurrentemissionofpdopedsicflexiblefieldemitters
AT yingpengzhan extremelystablecurrentemissionofpdopedsicflexiblefieldemitters
AT yangweiyou extremelystablecurrentemissionofpdopedsicflexiblefieldemitters
AT fangxiaosheng extremelystablecurrentemissionofpdopedsicflexiblefieldemitters

Ejemplares similares