Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters

Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E (to) of 1.03–0.73 Vμm(−1) up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatur...

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Detalles Bibliográficos
Autores principales: Chen, Shanliang, Shang, Minghui, Gao, Fengmei, Wang, Lin, Ying, Pengzhan, Yang, Weiyou, Fang, Xiaosheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2015
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5063129/
https://www.ncbi.nlm.nih.gov/pubmed/27774383
http://dx.doi.org/10.1002/advs.201500256

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5063129/
https://www.ncbi.nlm.nih.gov/pubmed/27774383
http://dx.doi.org/10.1002/advs.201500256

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