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Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E (to) of 1.03–0.73 Vμm(−1) up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatur...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5063129/ https://www.ncbi.nlm.nih.gov/pubmed/27774383 http://dx.doi.org/10.1002/advs.201500256 |