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Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap...

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Autores principales: Huang, Zhong-Mei, Huang, Wei-Qi, Dong, Tai-Ge, Wang, Gang, Wu, Xue-Ke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5069211/
https://www.ncbi.nlm.nih.gov/pubmed/27757943
http://dx.doi.org/10.1186/s11671-016-1682-4
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author Huang, Zhong-Mei
Huang, Wei-Qi
Dong, Tai-Ge
Wang, Gang
Wu, Xue-Ke
author_facet Huang, Zhong-Mei
Huang, Wei-Qi
Dong, Tai-Ge
Wang, Gang
Wu, Xue-Ke
author_sort Huang, Zhong-Mei
collection PubMed
description It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.
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spelling pubmed-50692112016-11-01 Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure Huang, Zhong-Mei Huang, Wei-Qi Dong, Tai-Ge Wang, Gang Wu, Xue-Ke Nanoscale Res Lett Nano Express It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI. Springer US 2016-10-18 /pmc/articles/PMC5069211/ /pubmed/27757943 http://dx.doi.org/10.1186/s11671-016-1682-4 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Huang, Zhong-Mei
Huang, Wei-Qi
Dong, Tai-Ge
Wang, Gang
Wu, Xue-Ke
Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
title Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
title_full Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
title_fullStr Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
title_full_unstemmed Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
title_short Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure
title_sort enhanced emission of quantum system in si-ge nanolayer structure
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5069211/
https://www.ncbi.nlm.nih.gov/pubmed/27757943
http://dx.doi.org/10.1186/s11671-016-1682-4
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