Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu fo...

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Detalles Bibliográficos
Autores principales: Wu, Chenping, Soomro, Abdul Majid, Sun, Feipeng, Wang, Huachun, Huang, Youyang, Wu, Jiejun, Liu, Chuan, Yang, Xiaodong, Gao, Na, Chen, Xiaohong, Kang, Junyong, Cai, Duanjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5069463/
https://www.ncbi.nlm.nih.gov/pubmed/27756906
http://dx.doi.org/10.1038/srep34766

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5069463/
https://www.ncbi.nlm.nih.gov/pubmed/27756906
http://dx.doi.org/10.1038/srep34766

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