Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates

Large‐sized MoS(2) crystals can be grown on SiO(2)/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS(2) crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The elec...

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Detalles Bibliográficos
Autores principales: Chen, Jianyi, Tang, Wei, Tian, Bingbing, Liu, Bo, Zhao, Xiaoxu, Liu, Yanpeng, Ren, Tianhua, Liu, Wei, Geng, Dechao, Jeong, Hu Young, Shin, Hyeon Suk, Zhou, Wu, Loh, Kian Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5071677/
https://www.ncbi.nlm.nih.gov/pubmed/27818906
http://dx.doi.org/10.1002/advs.201600033
Descripción
Sumario:Large‐sized MoS(2) crystals can be grown on SiO(2)/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS(2) crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS(2) crystals can reach ≈30 cm(2) V(−1) s(−1), which is comparable to those of exfoliated flakes. [Image: see text]

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