Cargando…
Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates
Large‐sized MoS(2) crystals can be grown on SiO(2)/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS(2) crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The elec...
| Autores principales: | , , , , , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2016
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5071677/ https://www.ncbi.nlm.nih.gov/pubmed/27818906 http://dx.doi.org/10.1002/advs.201600033 |
| _version_ | 1782461304981684224 |
|---|---|
| author | Chen, Jianyi Tang, Wei Tian, Bingbing Liu, Bo Zhao, Xiaoxu Liu, Yanpeng Ren, Tianhua Liu, Wei Geng, Dechao Jeong, Hu Young Shin, Hyeon Suk Zhou, Wu Loh, Kian Ping |
| author_facet | Chen, Jianyi Tang, Wei Tian, Bingbing Liu, Bo Zhao, Xiaoxu Liu, Yanpeng Ren, Tianhua Liu, Wei Geng, Dechao Jeong, Hu Young Shin, Hyeon Suk Zhou, Wu Loh, Kian Ping |
| author_sort | Chen, Jianyi |
| collection | PubMed |
| description | Large‐sized MoS(2) crystals can be grown on SiO(2)/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS(2) crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS(2) crystals can reach ≈30 cm(2) V(−1) s(−1), which is comparable to those of exfoliated flakes. [Image: see text] |
| format | Online Article Text |
| id | pubmed-5071677 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2016 |
| publisher | John Wiley and Sons Inc. |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-50716772016-11-02 Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates Chen, Jianyi Tang, Wei Tian, Bingbing Liu, Bo Zhao, Xiaoxu Liu, Yanpeng Ren, Tianhua Liu, Wei Geng, Dechao Jeong, Hu Young Shin, Hyeon Suk Zhou, Wu Loh, Kian Ping Adv Sci (Weinh) Communications Large‐sized MoS(2) crystals can be grown on SiO(2)/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS(2) crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS(2) crystals can reach ≈30 cm(2) V(−1) s(−1), which is comparable to those of exfoliated flakes. [Image: see text] John Wiley and Sons Inc. 2016-03-31 /pmc/articles/PMC5071677/ /pubmed/27818906 http://dx.doi.org/10.1002/advs.201600033 Text en © 2016 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
| spellingShingle | Communications Chen, Jianyi Tang, Wei Tian, Bingbing Liu, Bo Zhao, Xiaoxu Liu, Yanpeng Ren, Tianhua Liu, Wei Geng, Dechao Jeong, Hu Young Shin, Hyeon Suk Zhou, Wu Loh, Kian Ping Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates |
| title | Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates |
| title_full | Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates |
| title_fullStr | Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates |
| title_full_unstemmed | Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates |
| title_short | Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates |
| title_sort | chemical vapor deposition of high‐quality large‐sized mos(2) crystals on silicon dioxide substrates |
| topic | Communications |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5071677/ https://www.ncbi.nlm.nih.gov/pubmed/27818906 http://dx.doi.org/10.1002/advs.201600033 |
| work_keys_str_mv | AT chenjianyi chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT tangwei chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT tianbingbing chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT liubo chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT zhaoxiaoxu chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT liuyanpeng chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT rentianhua chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT liuwei chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT gengdechao chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT jeonghuyoung chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT shinhyeonsuk chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT zhouwu chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates AT lohkianping chemicalvapordepositionofhighqualitylargesizedmos2crystalsonsilicondioxidesubstrates |