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Chemical Vapor Deposition of High‐Quality Large‐Sized MoS(2) Crystals on Silicon Dioxide Substrates
Large‐sized MoS(2) crystals can be grown on SiO(2)/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS(2) crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The elec...
Autores principales: | Chen, Jianyi, Tang, Wei, Tian, Bingbing, Liu, Bo, Zhao, Xiaoxu, Liu, Yanpeng, Ren, Tianhua, Liu, Wei, Geng, Dechao, Jeong, Hu Young, Shin, Hyeon Suk, Zhou, Wu, Loh, Kian Ping |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5071677/ https://www.ncbi.nlm.nih.gov/pubmed/27818906 http://dx.doi.org/10.1002/advs.201600033 |
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