Cargando…
Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure
In ultra-high sensitive APDs, a vibrate of temperature might bring a fatal decline of the multiplication performance. Conventional method to realize a temperature-stable APD focuses on the optimization of device structure, which has limited effects. While in this paper, a solution by reducing the ca...
Autores principales: | Zheng, Jiyuan, Wang, Lai, Yang, Di, Yu, Jiadong, Meng, Xiao, Hao, Zhibiao, Sun, Changzheng, Xiong, Bing, Luo, Yi, Han, Yanjun, Wang, Jian, Li, Hongtao, Li, Mo, Li, Qian |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5075870/ https://www.ncbi.nlm.nih.gov/pubmed/27775088 http://dx.doi.org/10.1038/srep35978 |
Ejemplares similares
-
Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure
por: Deng, Jun, et al.
Publicado: (2020) -
Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
por: Yu, Jiadong, et al.
Publicado: (2016) -
Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
por: Niu, Lang, et al.
Publicado: (2011) -
Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
por: Kamarundzaman, Anas, et al.
Publicado: (2021) -
Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
por: Sang, Ling, et al.
Publicado: (2014)