Deep-submicron Graphene Field-Effect Transistors with State-of-Art f(max)

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation...

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Detalles Bibliográficos
Autores principales: Lyu, Hongming, Lu, Qi, Liu, Jinbiao, Wu, Xiaoming, Zhang, Jinyu, Li, Junfeng, Niu, Jiebin, Yu, Zhiping, Wu, Huaqiang, Qian, He
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5075922/
https://www.ncbi.nlm.nih.gov/pubmed/27775009
http://dx.doi.org/10.1038/srep35717

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5075922/
https://www.ncbi.nlm.nih.gov/pubmed/27775009
http://dx.doi.org/10.1038/srep35717

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