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Deep-submicron Graphene Field-Effect Transistors with State-of-Art f(max)

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation...

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Detalles Bibliográficos
Autores principales:	Lyu, Hongming, Lu, Qi, Liu, Jinbiao, Wu, Xiaoming, Zhang, Jinyu, Li, Junfeng, Niu, Jiebin, Yu, Zhiping, Wu, Huaqiang, Qian, He
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5075922/ https://www.ncbi.nlm.nih.gov/pubmed/27775009 http://dx.doi.org/10.1038/srep35717

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