Cargando…
Corrigendum: A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy
Autores principales: | Dai, Mingzhi, Khan, Karim, Zhang, Shengnan, Jiang, Kemin, Zhang, Xingye, Wang, Weiliang, Liang, Lingyan, Cao, Hongtao, Wang, Pengjun, Wang, Peng, Miao, Lijing, Qin, Haiming, Jiang, Jun, Xue, Lixin, Chu, Junhao |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090188/ https://www.ncbi.nlm.nih.gov/pubmed/27804978 http://dx.doi.org/10.1038/srep35519 |
Ejemplares similares
-
A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy
por: Dai, Mingzhi, et al.
Publicado: (2016) -
Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
por: Huo, Changhe, et al.
Publicado: (2019) -
Corrigendum: Recombination spot identification Based on gapped k-mers
por: Wang, Rong, et al.
Publicado: (2016) -
Corrigendum: Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution
por: Zhang, Feng, et al.
Publicado: (2016) -
Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
por: Liu, Zhiqiang, et al.
Publicado: (2016)