Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

The negative differential capacitance (NDC) effect is observed on a titanium–oxide–silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approx...

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Detalles Bibliográficos
Autores principales: Rangel-Kuoppa, Victor-Tapio, Tonkikh, Alexander, Werner, Peter, Jantsch, Wolfgang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2013
Materias:
Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090509/
https://www.ncbi.nlm.nih.gov/pubmed/27877578
http://dx.doi.org/10.1088/1468-6996/14/3/035005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090509/
https://www.ncbi.nlm.nih.gov/pubmed/27877578
http://dx.doi.org/10.1088/1468-6996/14/3/035005

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