Silica based polishing of {100} and {111} single crystal diamond

Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard chemical mechanical polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system wit...

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Detalles Bibliográficos
Autores principales: Thomas, Evan L H, Mandal, Soumen, Brousseau, Emmanuel B, Williams, Oliver A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2014
Materias:
Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090534/
https://www.ncbi.nlm.nih.gov/pubmed/27877689
http://dx.doi.org/10.1088/1468-6996/15/3/035013
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author Thomas, Evan L H
Mandal, Soumen
Brousseau, Emmanuel B
Williams, Oliver A
author_facet Thomas, Evan L H
Mandal, Soumen
Brousseau, Emmanuel B
Williams, Oliver A
author_sort Thomas, Evan L H
collection PubMed
description Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard chemical mechanical polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughness from 0.92 to 0.23 nm root mean square and 0.31 to 0.09 nm rms for {100} and {111} samples respectively was observed.
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spelling pubmed-50905342016-11-22 Silica based polishing of {100} and {111} single crystal diamond Thomas, Evan L H Mandal, Soumen Brousseau, Emmanuel B Williams, Oliver A Sci Technol Adv Mater Papers Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard chemical mechanical polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughness from 0.92 to 0.23 nm root mean square and 0.31 to 0.09 nm rms for {100} and {111} samples respectively was observed. Taylor & Francis 2014-06-24 /pmc/articles/PMC5090534/ /pubmed/27877689 http://dx.doi.org/10.1088/1468-6996/15/3/035013 Text en © 2014 National Institute for Materials Science http://creativecommons.org/licenses/by/3.0/ Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (http://creativecommons.org/licenses/by/3.0) . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
spellingShingle Papers
Thomas, Evan L H
Mandal, Soumen
Brousseau, Emmanuel B
Williams, Oliver A
Silica based polishing of {100} and {111} single crystal diamond
title Silica based polishing of {100} and {111} single crystal diamond
title_full Silica based polishing of {100} and {111} single crystal diamond
title_fullStr Silica based polishing of {100} and {111} single crystal diamond
title_full_unstemmed Silica based polishing of {100} and {111} single crystal diamond
title_short Silica based polishing of {100} and {111} single crystal diamond
title_sort silica based polishing of {100} and {111} single crystal diamond
topic Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090534/
https://www.ncbi.nlm.nih.gov/pubmed/27877689
http://dx.doi.org/10.1088/1468-6996/15/3/035013
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AT brousseauemmanuelb silicabasedpolishingof100and111singlecrystaldiamond
AT williamsolivera silicabasedpolishingof100and111singlecrystaldiamond

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