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Time-resolved single dopant charge dynamics in silicon
As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095180/ https://www.ncbi.nlm.nih.gov/pubmed/27782125 http://dx.doi.org/10.1038/ncomms13258 |
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author | Rashidi, Mohammad Burgess, Jacob A. J. Taucer, Marco Achal, Roshan Pitters, Jason L. Loth, Sebastian Wolkow, Robert A. |
author_facet | Rashidi, Mohammad Burgess, Jacob A. J. Taucer, Marco Achal, Roshan Pitters, Jason L. Loth, Sebastian Wolkow, Robert A. |
author_sort | Rashidi, Mohammad |
collection | PubMed |
description | As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified. |
format | Online Article Text |
id | pubmed-5095180 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-50951802016-11-18 Time-resolved single dopant charge dynamics in silicon Rashidi, Mohammad Burgess, Jacob A. J. Taucer, Marco Achal, Roshan Pitters, Jason L. Loth, Sebastian Wolkow, Robert A. Nat Commun Article As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified. Nature Publishing Group 2016-10-26 /pmc/articles/PMC5095180/ /pubmed/27782125 http://dx.doi.org/10.1038/ncomms13258 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Rashidi, Mohammad Burgess, Jacob A. J. Taucer, Marco Achal, Roshan Pitters, Jason L. Loth, Sebastian Wolkow, Robert A. Time-resolved single dopant charge dynamics in silicon |
title | Time-resolved single dopant charge dynamics in silicon |
title_full | Time-resolved single dopant charge dynamics in silicon |
title_fullStr | Time-resolved single dopant charge dynamics in silicon |
title_full_unstemmed | Time-resolved single dopant charge dynamics in silicon |
title_short | Time-resolved single dopant charge dynamics in silicon |
title_sort | time-resolved single dopant charge dynamics in silicon |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095180/ https://www.ncbi.nlm.nih.gov/pubmed/27782125 http://dx.doi.org/10.1038/ncomms13258 |
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