Time-resolved single dopant charge dynamics in silicon

As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single...

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Detalles Bibliográficos
Autores principales: Rashidi, Mohammad, Burgess, Jacob A. J., Taucer, Marco, Achal, Roshan, Pitters, Jason L., Loth, Sebastian, Wolkow, Robert A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095180/
https://www.ncbi.nlm.nih.gov/pubmed/27782125
http://dx.doi.org/10.1038/ncomms13258

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095180/
https://www.ncbi.nlm.nih.gov/pubmed/27782125
http://dx.doi.org/10.1038/ncomms13258

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