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Stretching magnetism with an electric field in a nitride semiconductor
The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric ca...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095182/ https://www.ncbi.nlm.nih.gov/pubmed/27782126 http://dx.doi.org/10.1038/ncomms13232 |
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author | Sztenkiel, D. Foltyn, M. Mazur, G. P. Adhikari, R. Kosiel, K. Gas, K. Zgirski, M. Kruszka, R. Jakiela, R. Li, Tian Piotrowska, A. Bonanni, A. Sawicki, M. Dietl, T. |
author_facet | Sztenkiel, D. Foltyn, M. Mazur, G. P. Adhikari, R. Kosiel, K. Gas, K. Zgirski, M. Kruszka, R. Jakiela, R. Li, Tian Piotrowska, A. Bonanni, A. Sawicki, M. Dietl, T. |
author_sort | Sztenkiel, D. |
collection | PubMed |
description | The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm(−1). Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn(3+) ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here. |
format | Online Article Text |
id | pubmed-5095182 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-50951822016-11-18 Stretching magnetism with an electric field in a nitride semiconductor Sztenkiel, D. Foltyn, M. Mazur, G. P. Adhikari, R. Kosiel, K. Gas, K. Zgirski, M. Kruszka, R. Jakiela, R. Li, Tian Piotrowska, A. Bonanni, A. Sawicki, M. Dietl, T. Nat Commun Article The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm(−1). Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn(3+) ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here. Nature Publishing Group 2016-10-26 /pmc/articles/PMC5095182/ /pubmed/27782126 http://dx.doi.org/10.1038/ncomms13232 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Sztenkiel, D. Foltyn, M. Mazur, G. P. Adhikari, R. Kosiel, K. Gas, K. Zgirski, M. Kruszka, R. Jakiela, R. Li, Tian Piotrowska, A. Bonanni, A. Sawicki, M. Dietl, T. Stretching magnetism with an electric field in a nitride semiconductor |
title | Stretching magnetism with an electric field in a nitride semiconductor |
title_full | Stretching magnetism with an electric field in a nitride semiconductor |
title_fullStr | Stretching magnetism with an electric field in a nitride semiconductor |
title_full_unstemmed | Stretching magnetism with an electric field in a nitride semiconductor |
title_short | Stretching magnetism with an electric field in a nitride semiconductor |
title_sort | stretching magnetism with an electric field in a nitride semiconductor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095182/ https://www.ncbi.nlm.nih.gov/pubmed/27782126 http://dx.doi.org/10.1038/ncomms13232 |
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