Stretching magnetism with an electric field in a nitride semiconductor

The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric ca...

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Detalles Bibliográficos
Autores principales: Sztenkiel, D., Foltyn, M., Mazur, G. P., Adhikari, R., Kosiel, K., Gas, K., Zgirski, M., Kruszka, R., Jakiela, R., Li, Tian, Piotrowska, A., Bonanni, A., Sawicki, M., Dietl, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095182/
https://www.ncbi.nlm.nih.gov/pubmed/27782126
http://dx.doi.org/10.1038/ncomms13232

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095182/
https://www.ncbi.nlm.nih.gov/pubmed/27782126
http://dx.doi.org/10.1038/ncomms13232

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