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Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications
The organic material soluble polyimide (PI) and organic–inorganic hybrid PI–barium titanate (BaTiO(3)) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO(3) nanoparticles in a PI matrix) were successfully synthesized through a sol–gel process. The effects of various BaTiO(...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099310/ https://www.ncbi.nlm.nih.gov/pubmed/27822910 http://dx.doi.org/10.1186/s11671-016-1710-4 |
Sumario: | The organic material soluble polyimide (PI) and organic–inorganic hybrid PI–barium titanate (BaTiO(3)) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO(3) nanoparticles in a PI matrix) were successfully synthesized through a sol–gel process. The effects of various BaTiO(3) contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO(3)/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO(3) nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO(3) nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0–8.6 and 9.2–17.5 nF cm(−2), respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10(−1) cm(2) V(−1) s(−1), and on/off current of 8.4 × 10(7). |
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