Cargando…

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before...

Descripción completa

Detalles Bibliográficos
Autores principales:	Xiang, Lanyi, Wang, Wei, Xie, Wenfa
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099757/ https://www.ncbi.nlm.nih.gov/pubmed/27824101 http://dx.doi.org/10.1038/srep36291

Ejemplares similares

Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film
por: Xu, Ting, et al.
Publicado: (2017)

Nonvolatile ferroelectric field-effect transistors
por: Chai, Xiaojie, et al.
Publicado: (2020)

Nonvolatile ferroelectric domain wall memory
por: Sharma, Pankaj, et al.
Publicado: (2017)

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
por: Kim, Woo Young, et al.
Publicado: (2016)

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
por: Sakai, Shigeki, et al.
Publicado: (2010)

Nonvolatile ferroelectric domain wall memory integrated on silicon
por: Sun, Haoying, et al.
Publicado: (2022)

Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors
por: Choi, Junhwan, et al.
Publicado: (2022)

Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels
por: Van, Ngoc Huynh, et al.
Publicado: (2014)

Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories
por: Nga Ng, Tse, et al.
Publicado: (2015)

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
por: Baek, Sungpyo, et al.
Publicado: (2022)

Side‐Gated In(2)O(3) Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
por: Su, Meng, et al.
Publicado: (2016)

Ferroelectric-gate field effect transistor memories: device physics and applications
por: Park, Byung-Eun, et al.
Publicado: (2016)

Ferroelectric-gate field effect transistor memories: device physics and applications
por: Park, Byung-Eun, et al.
Publicado: (2020)

Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure
por: Zhang, Siqing, et al.
Publicado: (2020)

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
por: Liu, Houfang, et al.
Publicado: (2020)

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO(3) films
por: Song, Yanling, et al.
Publicado: (2022)

Quantifying the ozone and ultraviolet benefits already achieved by the Montreal Protocol
por: Chipperfield, M. P., et al.
Publicado: (2015)

Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation
por: Sun, Huabin, et al.
Publicado: (2014)

Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
por: Lee, Song, et al.
Publicado: (2023)

Overview of emerging nonvolatile memory technologies
por: Meena, Jagan Singh, et al.
Publicado: (2014)

A multilevel nonvolatile magnetoelectric memory
por: Shen, Jianxin, et al.
Publicado: (2016)

Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD
por: Oh, Jong Hyeok, et al.
Publicado: (2023)

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (Adv. Sci. 21/2022)
por: Baek, Sungpyo, et al.
Publicado: (2022)

Transistor Memory: 4,5‐Diazafluorene‐Based Donor–Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory (Adv. Sci. 12/2018)
por: Yu, Yang, et al.
Publicado: (2018)

Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory
por: Sarkar, Kalyan Jyoti, et al.
Publicado: (2019)

High mobility, low voltage operating C(60) based n-type organic field effect transistors
por: Schwabegger, G., et al.
Publicado: (2011)

A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory
por: Yeh, Mu-Shih, et al.
Publicado: (2014)

Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region
por: Na, Taehui
Publicado: (2021)

Effects of Charge Trapping on Memory Characteristics for HfO(2)-Based Ferroelectric Field Effect Transistors
por: Wang, Jianjian, et al.
Publicado: (2023)

4,5‐Diazafluorene‐Based Donor–Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory
por: Yu, Yang, et al.
Publicado: (2018)

Large Displacement in Relaxor Ferroelectric Terpolymer Blend Derived Actuators Using Al Electrode for Braille Displays
por: Lu, S. G., et al.
Publicado: (2015)

Re-evaluation of the origin of relaxor ferroelectricity in vinylidene fluoride terpolymers: An approach using switching current measurements
por: Tsutsumi, Naoto, et al.
Publicado: (2017)

Controlling the on/off current ratio of ferroelectric field-effect transistors
por: Katsouras, Ilias, et al.
Publicado: (2015)

Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
por: Dragoman, Mircea, et al.
Publicado: (2020)

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing
por: Wang, Shuiyuan, et al.
Publicado: (2021)

Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer
por: Li, Yuan, et al.
Publicado: (2022)

Rational Design of Novel Conjugated Terpolymers Based on Diketopyrrolopyrrole and Their Applications to Organic Thin-Film Transistors
por: Ren, Shiwei, et al.
Publicado: (2023)

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory
por: Nagashima, Kazuki, et al.
Publicado: (2014)

Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
por: Cao, Ronggen, et al.
Publicado: (2014)

Local Maps of the Polarization and Depolarization in Organic Ferroelectric Field-Effect Transistors
por: Cai, Ronggang, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_cn2joi1iniqg57ti930fr847c6