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The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for the drift motion of oxygen vacancies. We show that...

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Detalles Bibliográficos
Autores principales:	Oh, Young Jun, Noh, Hyeon-Kyun, Chang, Kee Joo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Taylor & Francis 2015
Materias:	Focus on Advanced Inorganic Materials Science: Non-Traditional Concepts and Approaches
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099836/ https://www.ncbi.nlm.nih.gov/pubmed/27877799 http://dx.doi.org/10.1088/1468-6996/16/3/034902

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