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Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power

An extremely sensitive dependence of the electronic properties of SnO(x) film on sputtering deposition power is discovered experimentally. The carrier transport sharply switches from n-type to p-type when the sputtering power increases by less than 2%. The best n-type carrier transport behavior is o...

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Autores principales: Li, Yunpeng, Xin, Qian, Du, Lulu, Qu, Yunxiu, Li, He, Kong, Xi, Wang, Qingpu, Song, Aimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099937/
https://www.ncbi.nlm.nih.gov/pubmed/27824093
http://dx.doi.org/10.1038/srep36183
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author Li, Yunpeng
Xin, Qian
Du, Lulu
Qu, Yunxiu
Li, He
Kong, Xi
Wang, Qingpu
Song, Aimin
author_facet Li, Yunpeng
Xin, Qian
Du, Lulu
Qu, Yunxiu
Li, He
Kong, Xi
Wang, Qingpu
Song, Aimin
author_sort Li, Yunpeng
collection PubMed
description An extremely sensitive dependence of the electronic properties of SnO(x) film on sputtering deposition power is discovered experimentally. The carrier transport sharply switches from n-type to p-type when the sputtering power increases by less than 2%. The best n-type carrier transport behavior is observed in thin-film transistors (TFTs) produced at a sputtering power just below a critical value (120 W). In contrast, at just above the critical sputtering power, the p-type behavior is found to be the best with the TFTs showing the highest on/off ratio of 1.79 × 10(4) and the best subthreshold swing among all the sputtering powers that we have tested. A further increase in the sputtering power by only a few percent results in a drastic drop in on/off ratio by more than one order of magnitude. Scanning electron micrographs, x-ray diffraction spectra, x-ray photoelectron spectroscopy, as well as TFT output and transfer characteristics are analyzed. Our studies suggest that the sputtering power critically affects the stoichiometry of the SnO(x) film.
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spelling pubmed-50999372016-11-14 Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power Li, Yunpeng Xin, Qian Du, Lulu Qu, Yunxiu Li, He Kong, Xi Wang, Qingpu Song, Aimin Sci Rep Article An extremely sensitive dependence of the electronic properties of SnO(x) film on sputtering deposition power is discovered experimentally. The carrier transport sharply switches from n-type to p-type when the sputtering power increases by less than 2%. The best n-type carrier transport behavior is observed in thin-film transistors (TFTs) produced at a sputtering power just below a critical value (120 W). In contrast, at just above the critical sputtering power, the p-type behavior is found to be the best with the TFTs showing the highest on/off ratio of 1.79 × 10(4) and the best subthreshold swing among all the sputtering powers that we have tested. A further increase in the sputtering power by only a few percent results in a drastic drop in on/off ratio by more than one order of magnitude. Scanning electron micrographs, x-ray diffraction spectra, x-ray photoelectron spectroscopy, as well as TFT output and transfer characteristics are analyzed. Our studies suggest that the sputtering power critically affects the stoichiometry of the SnO(x) film. Nature Publishing Group 2016-11-08 /pmc/articles/PMC5099937/ /pubmed/27824093 http://dx.doi.org/10.1038/srep36183 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Li, Yunpeng
Xin, Qian
Du, Lulu
Qu, Yunxiu
Li, He
Kong, Xi
Wang, Qingpu
Song, Aimin
Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power
title Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power
title_full Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power
title_fullStr Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power
title_full_unstemmed Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power
title_short Extremely Sensitive Dependence of SnO(x) Film Properties on Sputtering Power
title_sort extremely sensitive dependence of sno(x) film properties on sputtering power
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099937/
https://www.ncbi.nlm.nih.gov/pubmed/27824093
http://dx.doi.org/10.1038/srep36183
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