Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon

In this work, we investigate the transport processes governing the metal-assisted chemical etching (MacEtch) of silicon (Si). We show that in the oxidation of Si during the MacEtch process, the transport of the hole charges can be accomplished by the diffusion of metal ions. The oxidation of Si is s...

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Detalles Bibliográficos
Autores principales: Kong, Lingyu, Dasgupta, Binayak, Ren, Yi, Mohseni, Parsian K., Hong, Minghui, Li, Xiuling, Chim, Wai Kin, Chiam, Sing Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5100464/
https://www.ncbi.nlm.nih.gov/pubmed/27824123
http://dx.doi.org/10.1038/srep36582

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5100464/
https://www.ncbi.nlm.nih.gov/pubmed/27824123
http://dx.doi.org/10.1038/srep36582

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