Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate...

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Detalles Bibliográficos
Autores principales: Schubert, Felix, Wirth, Steffen, Zimmermann, Friederike, Heitmann, Johannes, Mikolajick, Thomas, Schmult, Stefan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2016
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101906/
https://www.ncbi.nlm.nih.gov/pubmed/27877874
http://dx.doi.org/10.1080/14686996.2016.1178565

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101906/
https://www.ncbi.nlm.nih.gov/pubmed/27877874
http://dx.doi.org/10.1080/14686996.2016.1178565

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