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Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers

Two-dimensional layered transition-metal dichalcogenides have attracted considerable interest for their unique layer-number-dependent properties. In particular, vertical integration of these two-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the design of...

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Detalles Bibliográficos
Autores principales: Yu, Woo Jong, Vu, Quoc An, Oh, Hyemin, Nam, Hong Gi, Zhou, Hailong, Cha, Soonyoung, Kim, Joo-Youn, Carvalho, Alexandra, Jeong, Munseok, Choi, Hyunyong, Castro Neto, A. H., Lee, Young Hee, Duan, Xiangfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105192/
https://www.ncbi.nlm.nih.gov/pubmed/27827360
http://dx.doi.org/10.1038/ncomms13278
Descripción
Sumario:Two-dimensional layered transition-metal dichalcogenides have attracted considerable interest for their unique layer-number-dependent properties. In particular, vertical integration of these two-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the design of functional electronic and optoelectronic devices. Here we report the layer-number-dependent photocurrent generation in graphene/MoS(2)/graphene heterostructures by creating a device with two distinct regions containing one-layer and seven-layer MoS(2) to exclude other extrinsic factors. Photoresponse studies reveal that photoresponsivity in one-layer MoS(2) is surprisingly higher than that in seven-layer MoS(2) by seven times. Spectral-dependent studies further show that the internal quantum efficiency in one-layer MoS(2) can reach a maximum of 65%, far higher than the 7% in seven-layer MoS(2). Our theoretical modelling shows that asymmetric potential barriers in the top and bottom interfaces of the graphene/one-layer MoS(2)/graphene heterojunction enable asymmetric carrier tunnelling, to generate usually high photoresponsivity in one-layer MoS(2) device.