Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si

[Image: see text] Recently, it was shown that lasing from epitaxial Ge quantum dots (QDs) on Si substrates can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we present a model for the microscopic origin of the radiative transitions leading to enhanced photoluminesce...

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Detalles Bibliográficos
Autores principales: Grydlik, Martyna, Lusk, Mark T., Hackl, Florian, Polimeni, Antonio, Fromherz, Thomas, Jantsch, Wolfgang, Schäffler, Friedrich, Brehm, Moritz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2016
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5108030/
https://www.ncbi.nlm.nih.gov/pubmed/27701863
http://dx.doi.org/10.1021/acs.nanolett.6b02494

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5108030/
https://www.ncbi.nlm.nih.gov/pubmed/27701863
http://dx.doi.org/10.1021/acs.nanolett.6b02494

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