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Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si
[Image: see text] Recently, it was shown that lasing from epitaxial Ge quantum dots (QDs) on Si substrates can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we present a model for the microscopic origin of the radiative transitions leading to enhanced photoluminesce...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5108030/ https://www.ncbi.nlm.nih.gov/pubmed/27701863 http://dx.doi.org/10.1021/acs.nanolett.6b02494 |